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1

A New High Current Gain 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination Structure: SSR-BJT

Nonaka, Kenichi, Horiuchi, Akihiko, Negoro, Yuki, Iwanaga, Kensuke, Yokoyama, Seiichi, Hashimoto, Hideki, Sato, Masashi, Maeyama, Yusuke, Shimizu, Masaaki, Iwakuro, Hiroaki

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 298 KB

english, 2009

2

Silver nanosintering: a lead-free alternative to soldering

Minoru Maruyama, Ryo Matsubayashi, Hiroaki Iwakuro, Seiji Isoda, Teruo Komatsu

Journal:

Applied Physics A: Materials Science & Processing

Year:

2008

Language:

english

File:

PDF, 929 KB

english, 2008

3

Suppressed surface-recombination structure and surface passivation for improving current gain of 4H-SiC BJTs

Kenichi Nonaka, Akihiko Horiuchi, Yuki Negoro, Kensuke Iwanaga, Seiichi Yokoyama, Hideki Hashimoto, Masashi Sato, Yusuke Maeyama, Masaaki Shimizu, Hiroaki Iwakuro

Journal:

physica status solidi (a)

Year:

2009

Language:

english

File:

PDF, 768 KB

english, 2009

4

Interactions of thin films of Pd and Pd/Si on GaAs: an X-ray photoelectron spectroscopic study combined with a thermodynamic analysis

Hiroaki Iwakuro, Tsukasa Kuroda, Dian Hong Shen, Hideichi Yagi

Journal:

Journal of Materials Science

Year:

1998

Language:

english

File:

PDF, 503 KB

english, 1998

5

X-ray photoelectron spectroscopy of Si/Pt and Pt/Si layers on GaAs

Kuroda, Tsukasa, Iwakuro, Hiroaki

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 619 KB

english, 1989

6

Study of Oxidation of TiSi 2 Thin Film by XPS

Yang, Wei Yi, Iwakuro, Hiroaki, Yagi, Hideichi, Kuroda, Tsukasa, Nakamura, Shogo

Journal:

Japanese Journal of Applied Physics

Year:

1984

File:

PDF, 1.74 MB

1984

7

Observation of GaSe-SnO 2 Heterostructure by XPS and AES

Tatsuyama, Chiei, Ichimura, Shoji, Iwakuro, Hiroaki

Journal:

Japanese Journal of Applied Physics

Year:

1982

File:

PDF, 546 KB

1982

8

XPS and AES Studies on the Oxidation of Layered Semiconductor GaSe

Iwakuro, Hiroaki, Tatsuyama, Chiei, Ichimura, Shoji

Journal:

Japanese Journal of Applied Physics

Year:

1982

File:

PDF, 873 KB

1982

9

Reverse Biased Electrochemical Etching of SiC-SBD

Nishikawa, Koichi, Maeyama, Yusuke, Fukuda, Yusuke, Shimizu, Masaaki, Sato, Masashi, Iwakuro, Hiroaki

Journal:

Materials Science Forum

Year:

2007

Language:

english

File:

PDF, 3.12 MB

english, 2007

10

Ohmic Contact for C-face n-Type 4H-SiC with Reduced Graphite Precipitation

Maeyama, Yusuke, Nishikawa, Kouichi, Fukuda, Yusuke, Shimizu, Masaaki, Sato, Masashi, Ono, J., Iwakuro, Hiroaki

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 472 KB

english, 2006

11

Stability of Molybdenum Schottky Contact to Silicon Carbide

Nishikawa, Kouichi, Shimizu, Masaaki, Foster, Brian, Iwakuro, Hiroaki

Journal:

Materials Science Forum

Year:

2001

File:

PDF, 287 KB

2001

12

Surface Passivation of 4H-SiC for High Current Gain Bipolar Junction Transistors

Negoro, Yuki, Horiuchi, Akihiko, Iwanaga, Kensuke, Yokoyama, Seiichi, Hashimoto, Hideki, Nonaka, Kenichi, Maeyama, Yusuke, Sato, Masashi, Shimizu, Masaaki, Iwakuro, Hiroaki

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 305 KB

english, 2009

13

Point-Contact Current Voltage Technique for Depth Profiling of Dopants in Silicon Carbide

Fukuda, Yusuke, Nishikawa, Kouichi, Shimizu, Masaaki, Iwakuro, Hiroaki

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 286 KB

2002

14

Device Simulation Model for Transient Analysis of SiC-SBD

Tomita, Masaaki, Maeyama, Yusuke, Sato, M., Fukuda, Y., Honma, F., Ono, J., Shimizu, Masaaki, Iwakuro, Hiroaki

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 356 KB

english, 2009

15

A Study of CCl 2 F 2 Magnetron Ion Etching Damage and Contamination Effects in Silicon

Kuroda, Tsukasa, Iwakuro, Hiroaki

Journal:

Japanese Journal of Applied Physics

Year:

1990

File:

PDF, 941 KB

1990

16

X-Ray Photoelectron Spectroscopy of Pt/GaAs Interfacial Reactions

Iwakuro, Hiroaki, Kuroda, Tsukasa

Journal:

Japanese Journal of Applied Physics

Year:

1989

File:

PDF, 798 KB

1989

17

Crystal Structure of TiN Film Fabricated by Reactive Sputtering on Si(100) Substrate

Tsuchida, Masahiko, Kuroda, Tsukasa, Iwakuro, Hiroaki, Shimizu, Takashi

Journal:

Japanese Journal of Applied Physics

Year:

1993

Language:

english

File:

PDF, 370 KB

english, 1993

18

Device contamination by O2 plasma ashing.

IWAKURO, Hiroaki, KURODA, Tsukasa, HIRAI, Minoru

Journal:

Journal of The Surface Finishing Society of Japan

Year:

1990

File:

PDF, 1.07 MB

1990